IM Flash Technologies
Exterior of IM Flash Technologies, Lehi, Utah, USA
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| Non-Public | |
| Industry | Semiconductor integrated circuitry |
| Founded | 2006 |
| Headquarters | 4000 North Flash Drive Lehi, Utah USA |
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Key people
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Keyvan Esfarjani and Guy Blalock |
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Number of employees
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1,500 - 2,000 |
| Website | IMFLASH.com |
IM Flash Technologies, LLC is the joint venture semiconductor company founded in January 2006, by Intel Corporation and Micron Technology, Inc.
IM Flash produces NAND flash memory for use in consumer electronics, removable storage and handheld communication devices.
It has a 300mm wafer fab in Lehi, UT, United States, and built a second 300mm wafer fab, IM Flash Singapore, which opened in April 2011.[1]
IM Flash took the leading edge in NAND flash scaling by moving to 34 nm design rules in 2008.[2] IM Flash has been able to devise 25-nm NAND chips with 193-nm immersion lithography, plus self-aligned double-patterning (SADP) techniques, where it is widely believed that it is using scanners from ASML Holdings NV and SADP technology.[3] In 2011 IM Flash moved to a 20 nm process– which was the smallest NAND flash technology as of April, 2011.[4]
In July 2015, Intel and Micron announced 3D xPoint is being manufactured at IM Flash.
References
- ↑ Intel, Micron Open Singapore NAND Flash Plant
- ↑ Intel, Micron roll 34-nm NAND device
- ↑ Intel, Micron take NAND lead, roll 25-nm chip
- ↑ Intel and Micron announce new 20nm NAND Flash manufacturing process April 14, 2011.
External links
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